稀土Gd对热压烧结Bi_2Te_3基材料热电性能的影响  

Effects of Gd on Thermoelectric Properties of Bi_2Te_3 Based Materials

作　　者：任攀[1,2] 吴荣归[1,2] 张艳华[1,2,3] 徐桂英[1,2] 

机构地区：[1]北京科技大学特种陶瓷与粉末冶金研究所,北京100083 [2]北京新能源材料重点实验室,北京100083 [3]装备指挥技术学院士官系,北京102249

出　　处：《材料科学与工程学报》2010年第2期279-282,316,共5页Journal of Materials Science and Engineering

摘　　要：稀土元素对Bi2Te3基材料热电性能的影响一直是Bi2Te3基热电材料研究的热点。本文研究了不同Gd掺杂量Bi2Te3基热电材料的热压烧结工艺参数,运用XRD,SEM方法对材料的物相成分和形貌进行了表征,研究了20MPa下不同Gd掺杂对Bi2Te3基材料的载流子浓度、电导率、Seebeck系数的影响。研究结果表明,Gd掺杂没有明显改变Bi2Te3基材料的晶体结构,适量的Gd掺杂有利于减小载流子浓度、提高Bi2Te3基材料的热电性能。The effects of rare earth elements on thermoelectric performances of Bi2Te3-based thermoelectric materials have always been hot topics.Here the hot-pressure sintering parameters versus different Gd dopants into Bi2Te3-based thermoelectric materials were studied.The composition and morphology were characterized by XRD and SEM analysis.The influences of different amounts of Gd dopants on the carrier concentration,electrical conductivity,and seebeck coefficient of Bi2Te3-based materials were studied.The results show that,Gd-dopant do not change the crystal structure of Bi2Te3-based materials evidently.An appropriate amount of Gd dopant is conducive to reducing the carrier concentration and improving the thermoelectric properties of Bi2Te3-based materials.

关 键 词：Bi2Te3基材料 热压烧结 GD掺杂 热电性能 

分 类 号：O472.7[理学—半导体物理]