高温高压合成热电材料AgPb_(18)SbTe_(20)的电学性能(英文)  

Enhanced Power Factor of AgPb_(18)SbTe_(20) Prepared by HPHT

作　　者：宿太超[1] 马红安[2] 李小雷[1] 李尚升[1] 于凤荣[3] 田永君[3] 贾晓鹏[1,2] 

机构地区：[1]河南理工大学材料科学与工程学院,河南焦作454000 [2]吉林大学超硬材料国家重点实验室,吉林长春130012 [3]燕山大学亚稳态材料国家重点实验室,河北秦皇岛066004

出　　处：《材料科学与工程学报》2010年第2期308-311,共4页Journal of Materials Science and Engineering

基　　金：National Science Foundation of China(50731006)、(50801030);the Doctor foundation of Henan Polytechnic University

摘　　要：采用高温高压方法制备了热电材料Ag0.8Pb18SbTe20,测试发现样品具有微米级晶粒和单相的NaCl结构。高压合成的Ag0.8Pb18SbTe20样品为N型半导体,电阻率和Seebeck系数的绝对值随温度的升高而增大。同其它方法制备的AgPb18SbTe20体系材料相比,高温高压方法制备的样品具有较低的电阻率。较低的电阻率导致了较大的功率因子(S2σmax≈17.2μW/cm-1K-2,T≈585K)。Although it has been reported that the AgPbmSbTe m＋2（m=18）based material has the maximum thermoelectric（TE）performance（ZT-2.2）in bulk TE materials,conflicting reports on the same materials claim only ZT of 1 or less.The main reason is that the samples reported by other pursuers have low power factor because of their higher resistivity than that of Hus＇s.In this paper,Ag 0.8 Pb 18 SbTe 20 was fabricated successfully by high pressure and high temperature（HPHT）method.The microstructure and temperature-dependent electrical properties including the Seebeck coefficient and the electrical resistivity were studied.The sample prepared by HPHT has much lower resistivity compared with that of the samples prepared by other methods at normal pressure.The enhanced power factor,17.2 μW/（cmK2）was obtained at 585 K for the HPHT synthesized Ag 0.8 Pb 18 SbTe 20 sample.High thermoelectric performance for AgPb 18 SbTe 20 was expected by further and systematic study using HPHT technique.

关 键 词：热电材料 高温高压 AgPb18SbTe20 

分 类 号：O472.4[理学—半导体物理]