添加Ge的In_(10)Sb_(10)Ge三元合金热电性能(英文)  

Thermoelectric Properties of Ternary Ge-added In_(10)Sb_(10) Ge Alloy

作　　者：颜艳明[1] 应鹏展[1] 崔教林[2] 付红[1] 张晓军[1] 

机构地区：[1]中国矿业大学材料科学与工程学院,江苏徐州221116 [2]宁波工程学院材料研究所,浙江宁波315016

出　　处：《材料科学与工程学报》2010年第2期312-316,共5页Journal of Materials Science and Engineering

基　　金：National Natural Science Foundation of China under(50871056);the National ‘863’ Hi tech.Program of China(2009AA03Z322)

摘　　要：InSb单晶材料具有相当高的载流子迁移率,因而有良好的电学性能。本文采用缓慢凝固技术制备出In-Sb-Ge三元合金,并在320K到706K的温度范围内测量其热电性能。显微结构观察表明,In-Sb-Ge三元合金的微观组织由嵌入含锗相的锑化铟相组成,这一结果与X射线衍射分析的结果相符。性能测试表明,其晶格热导率在整个温度范围内都非常低,尤其在低温下更低,而载流子热导率随温度的升高,从6.3(W.m-1.K-1)降低到2.4(W.m-1.K-1),在热传输过程中起主要作用。在708K时In10Sb10Ge合金的最高ZT值为0.18。It was reported that InSb single crystal has an excellent thermoelectric power factor due to its extremely high carrier mobility.In the present work we prepared Ge-added ternary In-Sb-Ge alloy using a mild solidification technique and evaluated its thermoelectric properties in the temperature range from 320 K to 708 K.Observations reveal that the microstructure is composed of the InSb phase with Ge-containing phase embedded,which is in agreement with the X-ray analysis.Measurements show that the lattice thermal conductivities are very low over the entire temperature range,especially at low temperatures,while the electronic component reduces from 6.3 to 2.4（W·m-1 ·K-1）with increasing temperature,and plays a dominant role in carrying heat.The highest thermoelectric figure of merit ZT of 0.18 can be achieved for In 10 Sb 10 Ge at 708 K.

关 键 词：热电性能 In10Sb10Ge三元合金 放电等离子烧结 

分 类 号：O472.7[理学—半导体物理]