大直径Hg_3In_2Te_6晶体生长与性能表征  

Bulk crystal growth and characterization of Hg_3In_2Te_6

作　　者：王新鹏[1] 孙晓燕[1] 介万奇[1] 罗林[1] 王涛[1] 傅莉[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2010年第4期578-580,586,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2007AA03Z442)

摘　　要：采用垂直布里奇曼法,成功生长出大直径Hg3In2Te6(Φ=30mm)晶体。通过傅立叶红外透射光谱测试了晶锭不同部位的红外透过率,并利用X射线双晶摇摆曲线表征了晶体的结晶质量。结果表明,定向切割晶片为(111)面单晶,衍射峰位于θ=12.1665°处,半峰宽为0.0760°;中部单晶片红外透过率平均值为50%,接近Hg3In2Te6晶体的红外透过率最大值57%。位错和成分非均匀性是造成晶锭不同部位红外透过率差异的主要因素。Bulk Hg3In2Te6 ingot with diameter of 30mm has been successfully grown through vertical Bridgman （VB） method.The infrared transmittance of crystal wafer cut from different parts of the ingot is measured through Fourier transformation infrared （FT-IR） transmission spectrum,and the crystalline quality of the Hg3In2Te6 is evaluated by means of X-ray rocking curve.The results show that the diffraction peak of （111） oriented wafer is located at θ=12.1665° with FWHM of 0.0760°.The average infrared transmittance of Hg3In2Te6 signal crystal in the middle of the ingot reach 50%,which is close to the theoretical value 57% of perfect single crystal.The dislocation and composition non-uniformity are the main reasons that lead to the infrared transmittance discrepancy of difference parts.

关 键 词：Hg3In2Te6 大直径晶体生长 垂直布里奇曼法 摇摆曲线 红外透射光谱 

分 类 号：TN304.2[电子电信—物理电子学]