1MeV中子辐照SiGe HBT器件的数值模拟  

Numerical Simulation of SiGe HBT Irradiated by 1MeV Neutron Beam

作　　者：王祖军[1,2] 刘书焕[2] 唐本奇[2] 陈伟[2] 黄绍艳[2] 肖志刚[2] 张勇[2] 刘敏波[2] 

机构地区：[1]清华大学工程物理系,粒子技术与辐射成像教育部重点实验室,北京100084 [2]西北核技术研究所,陕西西安710024

出　　处：《核电子学与探测技术》2010年第3期321-327,共7页Nuclear Electronics & Detection Technology

摘　　要：分析了SiGe HBT器件中子辐照效应损伤机理。运用MEDICI软件,对SiGe HBT器件中子辐照效应的数值模拟进行了探索性研究。计算了1MeV中子在不同辐照注量下对SiGe HBT器件交直流特征参数的影响规律;中子辐照损伤与SiGe HBT器件中Ge组分含量关系;以及不同缺陷类型对SiGe HBT器件交直流特征参数的影响规律。通过对SiGe HBT器件辐照效应的数值模拟计算,验证了相关辐照实验得出的规律。With the analysis on the mechanisms of the SiGe HBT irradiated by 1MeV neutron beam, DC and AC characteristics of SiGe HBT＇s after neutron radiation were simulated by using the two-dimensional device numerical simulation software-MEDICI. The characteristic parameters were simulated in different neutron radiation fluence, different Ge content, different electron trap levels, respectively. The primary rules of collector current Ic, base current IB, current gain β and cut-off frequency frof SiGe HBT after neutron radiation were concluded.

关 键 词：SiGe HBT 中子辐照 缺陷能级 直流增益 截止频率 MEDICI 数值模拟 

分 类 号：O571.33[理学—粒子物理与原子核物理]