离子束辅助沉积制备TaN薄膜的X射线衍射分析  

X-ray Diffraction Analysis of the TaN Films Prepared by Ion Beam Assisted Deposition

作　　者：梅显秀[1] 张庆瑜[1] 马腾才[1] 王煜明[2] 滕凤恩[2] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024 [2]吉林大学材料科学系,长春130023

出　　处：《真空科学与技术》1998年第6期405-408,共4页Vacuum Science and Technology

摘　　要：利用离子束辅助沉积技术制备TaN薄膜，并对其进行X射线衍射分析。掠入射的X射线衍射分析得出：离子束辅助沉积制备的TaN薄膜是面心立方结构，晶格常数a为0．4405nm。根据X射线衍射分析，用屈服强度表征的TaN薄膜的显微硬度为16～20GPa，与文献上报道的显微硬度值接近。离子束辅助沉积制备的TaN薄膜宏观内应力较小，且都为压应力。晶粒尺寸大约在10nm左右，随着注入离子能量的增加，薄膜晶粒尺寸有长大的趋势。The TaN films prepared by IBAD were analyzed with XRD. Our glancing-angle XRD measure ments show that the TaN films have an fcc crystal structure with a lattice constant of 0.4405 nm. The calculated microhardness of the TaN for is in the range of 16～20 GPa, which is close to the values reported in the references. The XRD results also show that the stress of the TaN films is rather small and compressive. The grain sizes in the films are found to be about 10 nm, and the grains grow with the increase of ion beam energy.

关 键 词：离子束辅助沉积 氮化钽 薄膜 X射线衍射分析 

分 类 号：O484.1[理学—固体物理] O484.5[理学—物理]