杂质分布对多晶硅薄膜电性能的影响  

Influence of Impurity Distribution on the Electrical Properties of the Polycrystalline Silicon Films

作　　者：王岚[1] 刘雅言[1] 

机构地区：[1]中国科学院长春应用化学研究所,长春130022

出　　处：《真空科学与技术》1998年第3期216-219,共4页Vacuum Science and Technology

摘　　要：报道了多晶硅薄膜的制备方法及光生截流子在多晶硅晶界区域的收集、复合情况，并采用剖面分析方法研究了杂质的分布对多晶硅薄膜太阳电池电性能的影响。Polycrystalline silicon films were prepared by chemical vapor deposition(CVD). The collection and recombination of photon induced carriers at grain boundaries were discussed. Influence of impurities distributin on the electrical properties of polyrystalline silicon solar cell was studied with depth profile analysis.

关 键 词：多晶硅 薄膜 杂质分布 剖面分析 电阻率 

分 类 号：TN304.12[电子电信—物理电子学] O484.42[理学—固体物理]