离子束溅射作用下聚四氟乙烯薄膜的制备方法  

Studies of Teflon Films Grown by Ion Beam Sputtering

作　　者：王立铎[1] 何建立[1] 贺小明[1] 王英华[1] 李文治[1] 李恒德[1] 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《真空科学与技术》1998年第3期224-226,共3页Vacuum Science and Technology

摘　　要：在多功能离子束辅助沉积装置上采用交替溅射和冷却聚四氟乙烯靶材的方法制备了薄膜。由XPS的结果可知，所得薄膜主要由CF2结构组成；FT-IR的结果表明，所得薄膜由C-F的最强吸收峰和聚四氟乙烯的特征吸收峰构成。所得薄膜的这些结构特征与聚四氟乙烯的结构是一致的。试验结果表明，用这种离子束溅射沉积方法可以获得聚四氟乙烯薄膜。Teflon thin films were successfully prepared by alternative sputtering and cooling the teflon target in the home built polyfunctional ion beam assisted deposition system. The teflon films were studied with XPS and FT-IR techniques,respectively. The XPS spectra showed that CF2 structures are predominant in the films, and the FT-IR results showed that C-F absorption and teflon characteristic absorption are respensaible for the two strong peaks observed. The films can be well identified as teflon with the experimental results.

关 键 词：聚四氟乙烯 薄膜 离子束溅射沉积 制备 

分 类 号：TQ325.4[化学工程—合成树脂塑料工业] O484.1[理学—固体物理]