一种新的HBT小信号模型参数优化提取法  

A New Optimizing Parameter-Extraction Method for HBT's Small-Signal Equivalent Model

作　　者：胡晓萍[1] 胡建萍[1] 郑梁[1] 钟叶龙 

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310037 [2]华数华夏视联控股有限公司,浙江杭州310018

出　　处：《电子学报》2010年第3期567-571,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.60601022);浙江省自然科学基金(No.Y1080589)

摘　　要：阐述了一种新的异质结双极型晶体管(HBT)的小信号模型参数提取方法——综合多偏置点优化参数提取法.对HBT小信号模型进行推导并确定外部参数和内部参数的计算公式;介绍了多偏置点优化算法,并在GaInP/GaAsHBT器件上进行了鲁棒性和精确性测试.实验采用了一系列随机初始值,结果表明提取的参数值具有唯一收敛性和精确性,仿真结果与测量数据的相对误差小于1%.This paper presents a multibias optimizing parameter extraction technique for Heterojunction Bipolar Transistor（HBT）small-signal model.The corresponding equations for intrinsic and extrinsic elements have been established in according with small-signal HBT model through formula derivation.A multibias decomposition-based optimization method is discussed.Robustness and accuracy of optimization method are tested on measured S-parameters of GaInP/GaAs HBT device.Results show that the extracted parameters have the characteristics of exclusive astringency and accuracy with a different set of random starting values,and the relative error between the simulated results and the values measured is less than 1%.

关 键 词：异质结双极型晶体管 参数提取 小信号等效模型 

分 类 号：TN322[电子电信—物理电子学]