辐射损伤诱发CCD敏感参数退化分析  

The Analysis of CCD Sensitive Parameters Degraded by Radiation Damage

作　　者：王祖军[1,2] 刘以农[1] 陈伟[2] 唐本奇[2] 肖志刚[2] 黄绍艳[2] 刘敏波[2] 张勇[2] 

机构地区：[1]清华大学工程物理系,粒子技术与辐射成像教育部重点实验室,北京100084 [2]西北核技术研究所,陕西西安710024

出　　处：《核电子学与探测技术》2010年第2期151-156,170,共7页Nuclear Electronics & Detection Technology

摘　　要：研究了CCD敏感参数受辐照后的退化情况。分析了电荷转移效率受不同粒子辐照后的退化情况,并列表进行了对比;分析了暗电流受辐射增大的规律;分析了平带电压和阈值电压受辐射后的漂移现象。初步确定了CCD敏感参数的辐射损伤阈值范围。The sensitive parameters which are degraded by radiation damage are researched. It is analyzed that charge transfer efficiency（CTE） is decreased by irradiation of different particles. CTEs are listed to contrast degradation before and after radiation. It is analyzed that the radiation damage induces the dark current increase, the flatband voltage and the threshold shift. The damage thresholds of CCD sensitive parameters are primary decided

关 键 词：CCD 辐射损伤 体缺陷 敏感参数 损伤阈值 

分 类 号：O605[理学—化学] TN386.5[电子电信—物理电子学]