轴向应变对双势垒结构共振隧穿的影响  

The Influence of Axial Strain on Double-Barrier Resonant Tunneling

作　　者：张庆伟[1] 温廷敦[1] 

机构地区：[1]中北大学微米纳米技术研究中心,山西太原030051

出　　处：《微电子学与计算机》2010年第5期199-201,共3页Microelectronics & Computer

基　　金：国家自然科学基金项目(60776062)

摘　　要：首先介绍了共振隧穿理论和一种新效应——介观压阻效应,对AlxGa1-xAs/GaAl/AlxGa1-xAs共振隧穿双势垒结构的轴向施加压应变作了分析,然后计算了轴向应变对垒宽和垒高的影响,对透射系数和隧穿电流用Matlab作了仿真.发现压应变可以使隧穿电流线性增加,偏压不同电流增加的速率也不同,为设计共振隧穿器件提供了理论依据.This paper firstly introduced a new effect,meso-piezoresistive effect,analysed the strain on AlxGa1-xAs/GaAl/AlxGa1-xAs double-barrier resonant tunneling structure along the axis director; then computed the influence of the barrier width and height from the axial strain,used Matlab as tool simulate the transmission coefficient and tunneling electric current. Finally we find the strain can make the electric current increase linearly,the velocity of increase differ with different voltage. It offers a theory basis for devising resonant tunneling devices.

关 键 词：应变 共振隧穿 介观压阻效应 

分 类 号：O471[理学—半导体物理]