基于溶胶凝胶法ITO薄膜材料的制备与表征  

Preparation and superficial characteristics of ITO films by sol-gel

作　　者：宣鑫科[1] 陶佰睿[1] 张健[1] 

机构地区：[1]华东师范大学信息学院,上海200062

出　　处：《齐齐哈尔大学学报（自然科学版）》2010年第3期45-47,共3页Journal of Qiqihar University(Natural Science Edition)

摘　　要：基于溶胶凝胶法制备了掺铟二氧化锡(ITO)薄膜,探讨聚乙二醇(PEG)、退火温度、退火过程氧气浓度等因素对ITO薄膜性能的影响。实验结果表明:在相同实验条件下,添加PEG能够降低ITO薄膜表面粗糙度,退火温度会改变ITO薄膜的结晶度,提高含锡量和氧浓度会增加ITO薄膜的电阻率。本研究为ITO埋栅结构气敏传感器制备提供了实验基础。Indium tin oxide（ITO） thin films were deposited on oxidized silicon substrates by sol-gel process.The basic characteristics of ITO thin films with/without PEG additive was investigated in the environment with different temperature and oxygen concentration.The result showed that the ITO thin films with PEG had a better surface roughness as the effect of the annealing conditions mentioned.The annealing temperature will change the crystallinity of ITO films.Increasing the amount of tin and oxygen concentration will increase the resistivity of ITO film.The result obtained can be used as a sensing material for a promising gas sensor.

关 键 词：溶胶凝胶 二氧化锡薄膜 聚乙二醇 氧浓度 薄膜电阻率 

分 类 号：TQ150.1[化学工程—电化学工业]