强流脉冲电子束诱发单晶铜表层的缺陷结构  

Structural defects on the surface of single-crystal copper induced by a high-current pulsed electron beam

作　　者：顾倩倩[1] 王雪涛[1] 朱健[1,2] 邱冬华[1] 程秀围[1] 关庆丰[1] 储金宇[2] 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013 [2]江苏大学环境学院,江苏镇江212013

出　　处：《哈尔滨工程大学学报》2010年第4期533-536,共4页Journal of Harbin Engineering University

基　　金：国家自然科学基金资助项目(50671042);江苏大学科技创新团队及高级人才基金资助项目(07JDG032)

摘　　要：为了研究高速变形对金属材料微观结构的影响,利用强流脉冲电子束技术对单晶铜进行了辐照,并通过透射电镜对强流脉冲电子束诱发的表面微结构进行了分析.实验结果表明,位于电子束中心区域的单晶铜表层微结构以位错胞为主;而距离电子束中心区域较远处区域表层微结构则由大量的空位簇缺陷组成,在该区域很少能够观察到位错的出现,也观察不到位错滑移的痕迹.根据各自区域的微结构特征,对相应的变形机制进行了探讨.强流脉冲电子束辐照导致的{111}面整体位移可能是大量空位簇缺陷形成的根本原因.In order to investigate changes to the microstructures of metals induced by high-speed deformation,single-crystal copper was irradiated by a high-current pulsed electron beam（HCPEB）,and the microstructure of the irradiated copper was characterized using transmission electron microscopy（TEM）.It was found that dislocation cells formed by dislocation slips were the dominant defects around the irradiation center.On the other hand,abundant vacancy clusters appeared in regions far from the irradiation center,wherein no dislocation slips were observed.Based on the structural characteristics of the irradiated copper,a possible deformation mechanism induced by HCPEB irradiation was considered.It was proposed that high stress and strain rates induced by rapid heating and cooling due to HCPEB irradiation could cause the shifting of whole {111} atomic planes synchronously.This is the most probable mechanism for the formation of large numbers of vacancy defect clusters.

关 键 词：强流脉冲电子束 单晶铜 空位簇缺陷 应力 变形机制 

分 类 号：O483[理学—固体物理]