碳纳米管非对称接触结构制作及电学性能研究  

Fabrication and Electrical Properties of Carbon Nanotube Devices with Asymmetrical Contact Structure

作　　者：胡林[1] 陈长鑫[1] 张亚非[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米纳米加工技术国家级重点实验室薄膜和微细技术教育部重点实验室,上海200240

出　　处：《微纳电子技术》2010年第5期273-276,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金(60807008);上海应用材料研究与发展基金(08520741500;09520714400);高等学校博士学科点专项科研基金(200802481028);国家自然科学基金重点项目(50730008)

摘　　要：实验研究了多根或单根单壁碳纳米管与非对称金属电极接触结构的制作方法。先用介电泳方法(DEP)将碳纳米管定向排列在Au电极对之间,再用电子束光刻(EBL)在碳纳米管的一端加工Al电极,获得多根碳纳米管与金铝电极的非对称接触结构。先用EBL在Au电极对一端覆盖Al电极,再用DEP排列碳纳米管,实现单根碳管与金铝电极的非对称接触结构。非对称结构器件的电学测试研究表明,器件的I-V曲线不再对称,呈现出整流特性。Fabrication methods of multi or single carbon nanotube devices with asymmetrical metal electrode contact structure were investigated.Carbon nanotubes were aligned between two gold electrodes by dielectrophoresis（DEP）method.Then Al electrode was deposited on one end of the nanotubes by electron beam lithography（EBL）.Finally,the asymmetrical contact structure of multi carbon nanotubes and Au-Al electrodes was obtained.Al electrode was covered on one end of Au electrodes by EBL,and the carbon nanotubes were aligned by DEP.The asymmetrical contact structure of the single carbon nanotube and Au-Al electrodes was also achieved.Electrical measurement of the asymmetrical devices shows that I-V curves of the devices present the rectifying properties instead of symmetry.

关 键 词：单壁碳纳米管 介电泳 电子束光刻 非对称 整流 

分 类 号：TB383[一般工业技术—材料科学与工程]