用于高亮LED的Si键合研究  

Research on Silicon Bonding for High-Bright LED

作　　者：王书昶[1] 林岳明 李伙全[1] 刘剑霜[1] 张俊兵[1] 金豫浙[1] 曾祥华[1] 

机构地区：[1]扬州大学物理科学与技术学院,江苏扬州225002 [2]扬州华夏集成光电有限公司,江苏扬州225009

出　　处：《半导体技术》2010年第5期436-439,共4页Semiconductor Technology

基　　金：江苏省科技项目(BG2007026);扬州大学自然科学基金项目(2006XJJ02)

摘　　要：在Si和外延层之间使用一层薄金属层作为高效反射镜的所谓"镜面衬底",不但有助于提高芯片的出光效率,同时把键合温度降低到300℃以下。利用Au/In合金的方法,来实现用于高亮LED的Si片与AlGaInP四元外延片的键合。实验表明,在温度为250℃时,利用Au/In作为焊料,Si片与AlGaInP四元外延片可以实现比较好的键合,键合面可以达到60%。通过研磨减薄、X-ray测试和扫描电镜(SEM)测试得出键合面的界面特性,通过能谱分析得出键合面的物质分别为AuIn2和AuIn,实验测试得出此时Au的原子数占33.31%,In的原子数占36.64%。Using a thin metal layer as a highly efficient reflector of so-called ＂mirror substrate＂ between the Si and the epitaxial layer,it can improve the efficiency of the chip out of light,and the bonding temperature can be dropped to below 300 ℃.By Au/In alloy method,the experiment on Si-AlGaInP bonding was carried out.The result shows that at the temperature around 250 ℃ to 300 ℃,using Au/In as a solder,Si wafer with the AlGaInP wafer can realize a better bonding,the bonding area reaches to 60%.Via thinning by grinding,the bonding interface properties are given from the measurement of X-ray and scanning electron microscopy（SEM）.From energy spectrum analysis,the bonding interface elements are obtained as AuIn2 and AuIn,and the experimental tests show that the atomic number of Au occupies 33.31%,while the atomic number of In is 36.64%.

关 键 词：硅键合 Au/In合金 AlGaInP外延片 发光二极管 镜面衬底 

分 类 号：TN305.96[电子电信—物理电子学]