反应离子深刻蚀中加强热传递和抑制Notching效应的方法  

A Dual-Purpose Method to Enhance Heat Transfer and Prevent Notching Effect in Deep Reactive Ion Etching

作　　者：丁海涛[1] 杨振川[1] 闫桂珍[1] 

机构地区：[1]北京大学微电子学研究院,北京100871

出　　处：《电子学报》2010年第5期1201-1204,共4页Acta Electronica Sinica

基　　金：国家自然科学基金重点项目(No.NSF50730009)

摘　　要：提出了一种在反应离子深刻蚀中既可以加强热传递又可以抑制notching效应的方法,尤其适用于含有细长梁结构的刻蚀.通过在硅结构的下表面溅射一薄层金属,以加强刻蚀过程中产生的热量的消散,降低了硅结构的温度.用有限元仿真和实验分别验证了该方法的有效性.同时,金属层也抑制了刻蚀离子所带电荷在绝缘介质层上的积累,防止了自建电场的产生,抑制了notching效应.该方法通过扫描电子显微镜的测量也得到了实验验证.加工了一个SOI梳齿驱动器,检验了本方法的有效性和适应性.A practical dual-purpose method is presented not only to enhance heat transfer but also to prevent notching effect in deep reactive ion etching process, especially for a structure suspended by slim and long beams in overetching. A metal layer is sputtered on the bottom surface of top silicon to dissipate heat, therefore lower the temperature over the silicon structures. FEM simulation and experimental investigation are carried out to verify the effectiveness, respectively. Meanwhile, the metal layer prevents the charges of ionized radicals from accumulation on the dielectric layer of SOI or SOG, thus suppresses notching effect which is also validated by optical measurement. The applicability of the proposed method is examined by fabricating a SOI comb-finger actuator.

关 键 词：反应离子深刻蚀 热传递 notching效应 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]