延伸波长InGaAs红外探测器的实时γ辐照研究  

Real-time study of γ irradiation effect on extended wavelength InGaAs infrared detectors

作　　者：李淘[1,2,3] 乔辉[1,2] 李永富[1,2,3] 唐恒敬[1,2] 李雪[1,2] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [3]中国科学院研究生院,北京100039

出　　处：《激光与红外》2010年第5期511-514,共4页Laser & Infrared

基　　金：国家自然科学基金重点项目(No.50632060);中国科学院知识创新工程青年人才领域前沿项目(No.C2-32;C2-50)资助

摘　　要：通过实时测试方法,研究了延伸波长InGaAs红外探测器在55×104rad的γ辐照下的电流-电压特性变化,发现器件的暗电流没有明显变化,零偏电阻稍有变化,但变化的幅度很小。在辐照前后对器件的性能进行了测试,发现在辐照后器件的信号稍有下降,噪声基本不变,说明在受到辐照后器件的探测性能略有下降。对器件在辐照前后的低频噪声进行了测试,发现整个低频区的噪声都没有明显的改变。这些结论表明γ辐照对延伸波长InGaAs器件的影响较小。In this work,we used real-time measurement to investigate the I-V characteristic of extended wavelength InGaAs infrared detectors under 55×104 rad γ irradiation.The results indicate that the dark current of the devices have no obvious change,the R0 have small changes.The detector performances were measured before and after irradiation,the results show that the signal of detector decrease slightly after irradiation,and the noise almost don′t change,which means the detect performance becomes a little worse after irradiation.The low frequency noise was also measured,the results show that the noise in the low frequency region have no noticeable change.These results imply that to the extended wavelength InGaAs infrared detectors the γ irradiation has little effect.

关 键 词：红外探测器 INGAAS Γ辐照 

分 类 号：TN215[电子电信—物理电子学]