非晶Ni-Al阻挡层对快速退火制备的硅基Ba_(0.6)Sr_(0.4)TiO_3薄膜结构及物性影响的研究  

Impacts of Amorphous Ni-Al Barrier Layer on the Structure and Physical Properties of Si-based Ba_(0.6)Sr_(0.4)TiO_3 Film Annealed by Rapid Thermal Annealing

作　　者：孙杰[1,2] 刘保亭[1] 陈江恩[2] 娄建忠[2] 周阳[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002 [2]河北大学电子信息工程学院,保定071002

出　　处：《人工晶体学报》2010年第2期318-323,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(60876055);河北省自然科学基金(E2008000620;E2009000207);教育部科学技术研究重点项目(No.207013);河北省应用基础研究计划重点基础研究项目(08965124D);河北省教育厅科学研究计划(2007416);河北省科学技术厅科学技术研究与发展指导计划(No.07215154);河北大学博士基金(y2006091)

摘　　要：应用非晶Ni-Al薄膜作为扩散阻挡层,采用磁控溅射法和溶胶-凝胶法在Pt/TiO2/SiO2/Si（001）衬底上制备了Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt电容器结构,研究了在650~800℃温度范围内快速退火（RTA）工艺对电容器结构和物理性能的影响。结果表明：在外加电场为-100 kV/cm时,700℃和750℃退火样品的介电常数达到最大,分别为150和170。非晶Ni-Al薄膜的应用可以有效地降低BST薄膜的漏电流密度。650℃退火样品在整个测试电场范围内满足欧姆导电机制;700℃、750℃和800℃退火样品分别在电压低于-3.67 V、-2.65 V和-2.14 V时满足欧姆导电机制,在电压高于-3.67 V、-2.65 V和-2.14 V时满足普尔-弗兰克导电机制。Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt capacitor was fabricated on Pt/TiO2/SiO2/Si（001） substrates by RF magnetron sputtering and Sol-gel methods.Dependence of the structure and physical properties of Si-based Ba0.6Sr0.4TiO3（BST） film with amorphous Ni-Al diffusion barrier layer was investigated.It was found that the maximum dielectric constants of BST samples annealed at 700 ℃ and 750 ℃,measured at the electric field of-100 kV/cm,are 150,170,respectively.The amorphous Ni-Al layer can efficiently reduce the leakage current of BST films.At the whole measured electric field range,the BST sample annealed at 650 ℃ meet Ohmic conduction.BST films annealed at 700 ℃,750 ℃ and 800 ℃ also meet Ohmic conduction as the voltage is lower than-3.67 V,-2.65 V and-2.14 V,respectively.But these three samples demonstrate Poole-Frenkel emission conduction as the voltage is higher than-3.67 V,-2.65 V and-2.14 V,respectively.

关 键 词：BST薄膜 非晶Ni-Al阻挡层 快速退火 导电机制 

分 类 号：O484[理学—固体物理]