Cu层厚度对NiFe/Cu/Co的巨磁电阻效应影响  

Dependence of Cu Layer Thickness on the Giant Magneto Resistance in NiFe/Cu/Co Multilayer Films

作　　者：郑远开[1] 李佐宜[1] 于军[1] 谢基凡[1] 

机构地区：[1]华中理工大学电子科学与技术系

出　　处：《华中理工大学学报》1999年第1期47-49,共3页Journal of Huazhong University of Science and Technology

基　　金：国家自然科学基金

摘　　要：用磁控射频溅射法制备了ＮｉＦｅ／Ｃｕ／Ｃｏ多层膜；研究了薄膜的磁特性和磁电阻特性与中间层Ｃｕ厚度的关系．在适当的Ｃｕ层厚度下（大约为２ｎｍ），制备出了具有很好自旋阀巨磁阻效应的多层膜．研究表明，在弱磁场下，薄膜的磁电阻回线的斜率与原来的磁化过程有关。NiFe/Cu/Co multilayer films are deposited by magnetron RF sputtering system. The dependence of Cu layer thickness on the magnetic properties and giant magneto resistance properties are studied. At an appropriate thickness (about 2nm), the large spin valve giant magneto resistance effect films are obtained. In the minor magnetic field, the slope of the magneto resistance vs. Field curve depends on its past magnetization history. This film can be used in magneto resistance RAM.

关 键 词：多层膜 巨磁电阻效应 磁控射频溅射 薄膜 铜 钴 

分 类 号：O484.43[理学—固体物理]