铒近红外发光的瞬态特性  

Transient Characteristics of Near Infra red Electroluminescence in Devices Doped with Erbium

作　　者：柳兆洪[1,2] 林凡丝[1,2] 王余姜[1,2] 刘瑞堂 江炳熙 

机构地区：[1]厦门大学物理学系 [2]厦门大学计算机科学系

出　　处：《厦门大学学报（自然科学版）》1999年第1期31-34,共4页Journal of Xiamen University：Natural Science

基　　金：福建省自然科学基金

摘　　要：报道了用分舟热蒸发研制的掺铒硫化锌薄膜器件的电致近红外发光的瞬态特性，首次运用多段式指数衰减公式与高斯函数复合，描述薄膜发光的瞬态过程，理论结果与实验数据十分接近，证实薄膜的定域能级对器件的弛豫发光产生了影响．The transient characteristics of near infra red electroluminescence in zinc sulfide thin film devices doped with erbium prepared by thermal evaporation with two boats are reported. The transient process of the thin film luminescence is described by a compound function including exponential decay and Gaussian. The results fitted with the function are quite close to the experimental data and indicate that the relaxation luminescence is affected by the traps and local energy level in the thin film .

关 键 词：硫化锌薄膜 瞬态特性 铒 近红外发光器件 

分 类 号：TN214[电子电信—物理电子学] TN383.1