带GaAs TTL电平驱动器的SPDT开关的模拟和性能  

Simulation and Performance of SPDT Switch with GaAs TTL Driver

作　　者：赵静[1] 

机构地区：[1]电子工业部第十三研究所

出　　处：《半导体情报》1999年第1期44-46,共3页Semiconductor Information

摘　　要：介绍了一种带ＧａＡｓＴＴＬ电平驱动器及单刀双掷（ＳＰＤＴ）开关的设计、模拟和测试结果。驱动器的设计采用了开关输入稳压负载，建立了所用器件的大信号模型，对电路进行了模拟分析和优化，模拟和测试结果吻合较好，开关时间达到５ｎｓ，插入损耗小于１．０ｄＢ，隔离度大于６０ｄＢ。The design,results of simulation and measured performance of the SPDT switch with the GaAs TTL driver are presented in this work.The stable load and the input of the switch are adopted in the design of the GaAs driver.The circuit in the SPDT is simulated and optimized based on a non linear GaAs FET model for the large signal.The results of simulation and measured performance are in good agreement.Typical switching time of 5ns,the insertion loss less than 1 0dB,and isolation more than 60dB are achieved.

关 键 词：开关 驱动器 砷化镓 MMIC 

分 类 号：TN453.03[电子电信—微电子学与固体电子学] TN454.03