用于有源矩阵液晶显示的Ta-Ta2O5-TaMIM薄膜二极管  

A MIM Thin Film Diode with Ta Ta 2O 5 Ta Used for Active Matrix LCD

作　　者：黄蕙芬[1] 庄大明[1] 张浩康[1] 刘云峰[1] 

机构地区：[1]东南大学电子工程系

出　　处：《真空电子技术》1999年第1期15-17,共3页Vacuum Electronics

基　　金：江苏省应用基础资助

摘　　要：本文介绍了一种用于有源矩阵液晶显示、具有对称结构的ＭＩＭ薄膜二极管，其中Ｔａ２Ｏ５膜采用溅射／阳极氧化两步法制成。实验结果表明，用此法制备的氧化钽膜作绝缘层的ＭＩＭ二极管，具有良好的开关特性。A MIM thin film diode with Ta Ta 2O 5 Ta symmetrical structure for active matrix LCD is presented in this paper.The Ta 2O 5 thin film insulator layers of the MIM thin film diode are formed by anodizing sputtered tantalum oxide films (sputtering/anodization two step process).Experimental results show that the MIM diode using the two step oxidized sputtered/anodized tantalum oxide film has better switching characteristics,higher switching on/off ratio and more symmetric I V characteristics.

关 键 词：有源矩阵 液晶显示 MIM薄膜二极管 

分 类 号：TN141.9[电子电信—物理电子学] TN311.5