研究与玻璃粘接的GaAs/GaAlAs外延层晶体质量的X射线衍射方法  

Characterization of GaAs/GaAlAs Layer Bounded to Glass by X Ray Diffraction

作　　者：米侃[1] 赛小锋[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所

出　　处：《Journal of Semiconductors》1999年第2期152-156,共5页半导体学报（英文版）

摘　　要：本文应用高分辨率多重晶多次反射Ｘ射线衍射仪（Ｈｉｇｈ－ＲｅｓｏｌｕｔｉｏｎＭｕｌｔｉｐｌｅ－ＣｒｙｓｔａｌＭｕｌｔｉｐｌｅ－ＲｅｆｌｅｃｔｉｏｎＤｉｆｒａｃｔｏｍｅｔｅｒ，ＨＲＭＣＭＲＤ）研究了粘接后的ＧａＡｓ／ＧａＡｌＡｓ／玻璃结构．利用倒易空间衍射图的方法评价粘接后的晶体质量，给出了倒易空间衍射的三维强度分布图．结果表明，粘接过程中较大的应力将使应变的非四方畸变加剧，同时生长方向的应变产生较大的变化．这都将在晶体内部产生缺陷，影响器件的光电特性．成功的粘接样品表明，应变造成摇摆曲线的半峰宽（ＦＷＨＭ）约７０″，沿晶体生长方向的应变变化较小。Abstract The high resolution multiple crystal multiple reflection diffractometer (HRMCMRD) has been used to study the structure of GaAs/GaAlAs layer bounded to glass. The reciprocal space mapping has been developed to evaluate the crystal quality after the bounding, while, the reciprocal space 3 D intensity profiles are employed. It is shown that the relatively strong stresses due to the bounding increase the untetragonal distortion and cause the variation of the lattice parameter perpendicular to the crystal surface. All of these will bring about the defects in GaAs/GaAlAs layer which might be harmful to its photoelectric properties. The well bounded sample suggests that the width of the rocking cure is about 70 arc sec and the strain perpendicular to the crystal surface has a little change , and the shape of the reciprocal space 3 D profile is symmetry.

关 键 词：砷化镓 化合物半导体 HRMCMRD 镓铝砷化合物 

分 类 号：TN304.23[电子电信—物理电子学] TN304.26