脉冲激光烧蚀制备TaSi_2纳米颗粒  

TaSi_2 Nanoparticles Prepared by Pulsed Laser Ablation

作　　者：黄立娟[1] 王磊[1] 吴正龙[2] 朱世伟[1] 杜军[1] 

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088 [2]北京师范大学分析与测试中心,北京100875

出　　处：《中国激光》2010年第5期1347-1351,共5页Chinese Journal of Lasers

基　　金：北京有色金属研究总院创新技术基金(200952701)资助课题

摘　　要：利用脉冲激光烧蚀(PLA)技术烧蚀高纯TaSi2靶材,在高定向热解石墨(HOPG)基底上制备TaSi2纳米颗粒,用扫描电镜(SEM)分析纳米颗粒表面形貌,X射线光电子能谱(XPS)分析颗粒的化学组分和元素化学价态。SEM分析结果表明,PLA制备的TaSi2纳米颗粒平均尺寸为10 nm,面密度约1×1012cm-2;XPS分析表明HOPG基底上纳米颗粒表面的化学组分为Ta,Si,C,O元素,Ta和Si元素的存在方式主要是TaSi2,用积分面积灵敏度因子法计算Ta和Si原子比为1:2.2,接近TaSi2的化学计量比。进一步分析表明烧蚀过程中,部分Ta元素与C发生反应生成TaC,部分Si元素与C反应生成SiC;而O主要以化学吸附方式存在于样品表面。TaSi2 nanoparticles have been synthesized on highly oriented pyrolytic graphite（HOPG） by ablating high purity TaSi2 target using pulsed laser ablation（PLA） technique.Scanning electron microscopy（SEM） and X-ray photoelectron spectroscopy（XPS） are applied to analyze the surface morphology and chemical states of the sample.The SEM results reveal that the average size and surface density of nanoparticles are 10nm and 1×1012cm-2 respectively;The XPS spectra show that the surface chemical elements of the nanoparticles on the HOPG substrate include Ta,Si,C and O.The corresponding investigations confirm the presence of TaSi2 compound.Quantitative analyses indicate the atom ratio of Ta and Si is 1：2.2 utilizing integral peak area sensitivity factor method,which is close to that of stoichiometry TaSi2.The further analysis demonstrates that the formation of TaC is due to the reaction of Ta element and C in the laser ablation process,and the formation of SiC is due to the reaction of Si with C.At the same time,most of the O signals come from the chemical adsorption oxygen on the surface composition of TaSi2 nanoparticles.

关 键 词：激光技术 纳米颗粒 TaSi2 脉冲激光烧蚀 X射线光电子能谱 

分 类 号：O472.1[理学—半导体物理] TN429[理学—物理]