2B2R结构下高可靠性多值存储方法  

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

作　　者：徐乐[1] 解玉凤[1] 林殷茵[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《复旦学报（自然科学版）》2010年第2期209-214,共6页Journal of Fudan University：Natural Science

基　　金：国家自然科学基金(60676007);国家重点基础研究发展计划(“973”计划)(2007CB935403)资助项目

摘　　要：设计了一种运用互补单元,三极管作为选通管的2B2R结构,并利用相变存储电阻存在三态稳定阻值的特性,采用全新的以比值定义状态的存储方法,实现了四态多值存储.本设计中的相变存储单元在没有造成面积上牺牲的情况下,达到了1T1R四态多值存储单元的存储密度,并且改善了工艺波动对数据读出的影响,结合了占用面积小、存储密度大和可靠性高这3个优点,使得相变存储器在高密度,高可靠性的应用场合有着良好的前景.A 2B2R structure using complementary memory cells and bipolar transistors has been designed. Utilizing the three-level feature of PCR （Phase Change Resistor） and using the ratio definition of states, it realizes four-level storage. In this scheme, the phase change memory has reached the density of 1TIR four-level storage without the increasing of chip area. The influence of process variation on the reading operation has been optimized. The advantages of small area, high reliability and high density have been combined. All these issues will make phase change memory more competitive and promising in the high-density and high-reliability applications.

关 键 词：相变存储器 多值存储 多值存储单元 2T2R 282R 

分 类 号：TN403[电子电信—微电子学与固体电子学]