新型电极材料Sb掺杂BaSnO_3薄膜的外延生长及其在铁电薄膜电容器中的应用  

FABRICATION OF CONDUCTIVE Sb-DOPED BaSnO_3 FILMS AND THEIR APPLICATION IN FERROELECTRIC CAPACITORS

作　　者：刘亲壮[1] 焦兴利[1] 王海峰[1] 吴文彬[1] 

机构地区：[1]合肥微尺度物质科学国家实验室(筹),中国科学技术大学,合肥230026

出　　处：《低温物理学报》2010年第3期170-174,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金项目(批准号:10874166;50721061);国家基础研究项目(批准号:2006CB922005;2009CB929502)资助的课题~~

摘　　要：本文利用脉冲激光沉积技术在SrTiO_3单晶衬底上生长了Sb掺杂BaSnO_3(BSSO)外延薄膜.结构和输运性质测量结果显示BSSO薄膜是一种具有立方钙钛矿结构导电性很好的薄膜材料,80K时呈现金属绝缘体转变,室温下薄膜的电阻率、载流子浓度和迁移率分别为ρ=2.43 mΩcm,n=1.65×1021 cm^(-3)和μ=1.75 cm^2/Vs.以BSSO薄膜为底电极制备了具有比较好电滞回线的Pb(Zr_(0.52)Ti_(0.48))O_3和Bi(Mn_(0.05)Fe_(0.95))O_3铁电电容器,表明BSSO薄膜是一种具有应用前景的新型电极材料.In this paper we report on the epitaxial growth of Sb-doped BaSnO_3（BSSO） films on SrTiO_3（001） substrates by the pulsed laser deposition method.We show that BSSO films have a cubic perovskite structure with high conductivity and metal-semiconductor transition at 80℃.The room-temperature resistivity,carrier density and mobility were 2.43 mflcm,1.65×1021 cm^（-3） and 1.75 cm^2/V s,respectively.As a bottom electrode the films were employed for fabricating Pb（Zr_（0.52）Ti_（0.48））O_3 and Bi（Mn_（0.05）Fe_（0.95））O_3 ferroelectric capacitors,which show square polarization -electric field hysteresis loops,indicating that these BSSO films can be potentially used as a new electrode material especially for the all-perovskite heterostructure devices.

关 键 词：电极 锡酸盐 铁电电容器 

分 类 号：O484.1[理学—固体物理]