铁电移相器优值研究  

RESEARCH OF FIGURE OF MERIT FOR PHASE SHIFTER WITH FERROELECTRIC THIN FILM

作　　者：张晓玲[1] 孟庆端[1] 李娜[2] 张雪强[2] 何豫生[2] 

机构地区：[1]河南科技大学电子信息工程学院,河南洛阳471003 [2]中国科学院物理研究所,北京100080

出　　处：《低温物理学报》2010年第3期213-217,共5页Low Temperature Physical Letters

摘　　要：基于双周期性电容加载共面波导传输线的移相器结构,系统研究了温度变化对铁电薄膜移相器移相能力、传输损耗的影响.调整温度可以在一定的范围内实现对移相器性能指标的微调.给出了加载因子对移相能力的示意曲线图,并在实验上,借助氩离子刻蚀技术,改变加载因子的大小,使得移相器的优值从原来的13degree/dB提升到23degree/dB.Both differential phase shift and transmission loss of the phase shifter have been researched systematically from room temperature to 180 K,which consists of a coplanar waveguide（CPW） line periodically loaded with voltage-variable barium strontium titanate（BST） interdigitated capacitors.Figure of merit of phase shifter can be adjusted to some extent by temperature changing.The relationship between differential phase shift and loading factor is supported with schematic illustration.By means of argon ion etching technology,which is used to etch the BST-0.5 interdigitated capacitors for different time,figure of merit of the phase shift increased from 13degree/dB to 23degree/dB.

关 键 词：钛酸锶钡薄膜 共面移相器 优值 

分 类 号：TN623[电子电信—电路与系统]