弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究  

Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure

作　　者：周远明[1] 俞国林[1] 高矿红[1] 林铁[1] 郭少令[1] 褚君浩[1] 戴宁[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《物理学报》2010年第6期4221-4225,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2007CB924901);上海市科学技术委员会基础研究重点项目(批准号:07JC14059;09JC1415700);人事部留学回国人员科研基金资助的课题~~

摘　　要：研究了低温(1.5K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性.研究表明,器件在零偏压下处于共振状态.通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制.所得结果可为弱耦合双量子点器件的制备提供基础.We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature （1. 5 K） in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.

关 键 词：双量子阱 隧穿结构 磁电导振荡 

分 类 号：O471.1[理学—半导体物理]