硅片上超薄氧化硅层厚度测量的XPS标准曲线法  

Thickness Measurement of Ultrathin SiO_2 Layer on Si by Using XPS Standard Curve

作　　者：赵志娟[1] 刘芬[1] 王海[2] 赵良仲[1] 闫寿科[1,3] 宋小平[2] 

机构地区：[1]中国科学院化学研究所,北京100190 [2]中国计量科学研究院,北京100013 [3]北京化工大学化工资源有效利用国家重点实验室,北京100029

出　　处：《光谱学与光谱分析》2010年第6期1670-1673,共4页Spectroscopy and Spectral Analysis

基　　金：质检公益专项科研基金项目(10-199);国家杰出青年科学基金项目(20425414)资助

摘　　要：提出一种新的处理方法-XPS标准曲线法来测量硅片上超薄氧化硅层(SiO2/Si)的厚度。该方法利用一系列氧化硅厚度(d)准确已知的SiO2/Si标准样品,分别记录其氧化硅和元素硅的Si(2p)谱线,并得到峰高比(R),然后将厚度(d)对峰高比(R)作图得到标准曲线。在相同的实验条件下,测得未知样品氧化硅和元素硅的Si(2p)谱线并计算其峰高比,通过插入法在标准曲线上得到相应的氧化硅层厚度。SiO2/Si标准样品由设备一流和经验丰富的权威实验室提供,其氧化硅厚度采用多种方法进行测量比对。实验表明:基于氧化硅厚度准确知道的标准样品制作的XPS标准曲线,用于硅片上超薄氧化硅层厚度测量时具有快速、简便和比较准确等优点,有较好的实用价值。A new method of standard curve analysis associated with X-ray photoelectron spectroscopy （XPS） is presented for measuring the thickness of ultrathin SiO2 layer on Si substrate.In this method,XPS spectra of series SiO2/Si standard samples with different known thicknesses of silicon oxides are firstly recorded,and then the ratios of Si2p peak heights corresponding to SiO2 and Si,viz.R=HSiO2/HSi,are calculated.The known thicknesses of silicon oxides are plotted against the peak height ratios and an XPS standard curve is derived.Under the same experimental conditions,the samples with unknown thicknesses are measured by using XPS technique and then their thicknesses can be obtained from the XPS standard curve.The SiO2/Si standard samples were provided by authoritative lab with the advanced analytical equipments and rich experiences,and the oxide thicknesses were measured by multiple techniques.The present results show that the standard curve,plotted in terms of accuracy of the oxide thickness from the standard samples,can be used for the thickness measurement for ultrathin SiO2 on Si,and this method is valuable in practice owing to the swiftness,convenience and accuracy.

关 键 词：X射线光电子能谱(XPS) 氧化硅 厚度测量 标准曲线 

分 类 号：O657.6[理学—分析化学]