Ge_2Sb_2Te_5薄膜相变的内耗  

Internal Friction of the Phase Transition of Ge_2Sb_2Te_5 Thin Film

作　　者：胡大治[1] 薛若时[1] 吕笑梅[1] 朱劲松[1] 

机构地区：[1]南京大学固体微结构国家重点实验室,南京210093

出　　处：《上海交通大学学报》2010年第5期662-664,668,共4页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金资助项目(90207027)

摘　　要：采用脉冲激光沉积法在Si衬底制备了Ge2Sb2Te5合金薄膜,利用双端夹持音频簧振动技术在kHz范围内研究其由相变所引起的内耗谱,并通过电阻率测量加以验证.结果表明:在Ge2Sb2Te5薄膜的非晶相到立方相、立方相到六方相转变的温度范围内,出现了与相变有关的内耗峰P1和P2,其峰位置与升温速率有关且满足Kissinger关系;内耗峰P1和P2的相变激活能分别为(1.91±0.19)和(3.38±0.33)eV.The mechanic spectrum related with the phase transition in audio-frequency kHz range was studied in the Ge2Sb2Te5 thin film prepared by PLD method by a resonance bar method.Two peaks of internal friction in the region from RT to 400 ℃ were observed.The P1 and P2 peaks are ascribed to the transition from the amorphous to fcc and from fcc to hex respectively.The peak positions relate with the heating rate and obey the Kissinger rule.The active energy for P1 and P2 is（1.91±0.19）,（3.38±0.33） eV,respectively.

关 键 词：GE2SB2TE5薄膜 相变 内耗 

分 类 号：O484[理学—固体物理]