Damage mechanisms during lapping and mechanical polishing CdZnTe wafers  

作　　者：LI Yan,KANG Renke,GAO Hang,and WU Dongjiang Key Laboratory for Precision and Non-Traditional Machining Technology (Ministry of Education),Dalian University of Technology,Dalian 116024,China 

出　　处：《Rare Metals》2010年第3期276-279,共4页稀有金属（英文版）

基　　金：support from the Key Project of the National Natural Science Foundation of China (No. 50535020)

摘　　要：CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the subsurface.When a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly weakened.Moreover,this new damage type nearly disappears on the subsurface.CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the subsurface.When a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly weakened.Moreover,this new damage type nearly disappears on the subsurface.

关 键 词：LAPPING mechanical polishing WAFERS SURFACE SUBSURFACE ABRASIVE 

分 类 号：TG580.692[金属学及工艺—金属切削加工及机床]