WAFERS

作品数：49被引量：80H指数：4
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相关领域：电子电信更多>>
相关作者：郁元桓王启元蔡田海林兰英黄新明更多>>
相关机构：中国科学院清华大学南京工业大学更多>>
相关期刊：《International Journal of Plant Engineering and Management》《National Science Review》《Nanomanufacturing and Metrology》《Journal of Rare Earths》更多>>
相关基金：国家自然科学基金中国博士后科学基金国家重点基础研究发展计划高等学校学科创新引智计划更多>>
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Precise modulation of the debonding behaviours of ultra-thin wafers by laser-induced hot stamping effect and thermoelastic stress wave for advanced packaging of chips
《International Journal of Extreme Manufacturing》2025年第1期395-407,共13页Jieyuan Zhang Yanlei Hu Fangcheng Wang Qiang Liu Fangfang Niu Jinhui Li Mingqi Huang Guoping Zhang Rong Sun 
the National Natural Science Foundation of China(62174170);the Natural Science Foundation of Guangdong Province(2024A1515010123);the Shenzhen Science and Technology Program(20220807020526001);the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0670000);the Shenzhen Science and Technology Program(KJZD20230923114708018,KJZD20230923114710022);the Talent Support Project of Guangdong(2021TX06C101);the Shenzhen Basic Research(JCYJ20210324115406019).
Laser debonding technology has been widely used in advanced chip packaging,such as fan-out integration,2.5D/3D ICs,and MEMS devices.Typically,laser debonding of bonded pairs(R/R separation)is typically achieved by com...
关键词：laser debonding behaviours laser-induced hot stamping effect thermoelastic stress wave advanced packaging 
Erratum:“Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser”[J.Semicond.,2023,44(10),102302]
《Journal of Semiconductors》2024年第11期99-100,共2页Tianjiang He Suping Liu Wei Li Li Zhong Xiaoyu Ma Cong Xiong Nan Lin Zhennuo Wang 
The thickness and composition of the external laminae contain errors,leading to inaccuracies in the theoretical calculations and simulations associated with Fig.3,Fig.4,and Fig.5.However,as these theoretical calculati...
关键词：MIXING quantum VACANCY 
Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation
《Photonics Research》2024年第8期1776-1784,共9页HAO SU JIAWEN QIU JUNLONG LI RONG CHEN JIANBI LE XIAOYANG LEI YONGAI ZHANG XIONGTU ZHOU TAILIANG GUO CHAOXING WU 
National Key Research and Development Program of China(2021YFB3600400);Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China(2020ZZ113)。
Non-destructive and accurate inspection of gallium nitride light-emitting diode(Ga N-LED)epitaxial wafers is important to Ga N-LED technology.However,the conventional electroluminescence inspection,the photoluminescen...
关键词：ELECTROLUMINESCENCE operation EPITAXIAL 
Optical colorimetric LiTaO_(3)wafers for highprecision lithography on frequency control of SAW devices
《Photonics Research》2024年第2期341-349,共9页MING HUI FANG YINONG XIE FANGQI XUE ZHILIN WU JUN SHI SHENG YU YANG YILIN LIU ZHIHUANG LIU HSIN CHI WANG FAJUN LI QING HUO LIU JINFENG ZHU 
Youth Talent Support Program of Fujian Province(Eyas Plan of Fujian Province);National Natural Science Foundation of China(62175205);Natural Science Foundation of Fujian Province(2020J06009)。
Surface acoustic wave(SAW)resonators based on lithium tantalate(LT,LiTaO_(3))wafers are crucial elements of mobile communication filters.The use of intrinsic LT wafers typically brings about low fabrication accuracy o...
关键词：LITHOGRAPHY DOPING WAFER 
Detector-grade perovskite single-crystal wafers via stress-free gel-confined solution growth targeting high-resolution ionizing radiation被引量：1
《Light(Science & Applications)》2023年第5期754-765,共12页Yilong Song Lixiang Wang Yongqiang Shi Weihui Bi Jianwu Chen Mingwei Hao Anran Wang Xueying Yang Yuan Sun Fan Yu Liansheng Li Yanjun Fang Deren Yang Qingfeng Dong 
supported by the National Natural Science Foundation of China(No.22179050,No.21875089,No.62075191,No.52003235,and No.61721005);the China Postdoctoral Science Foundation(No.2022T150251);the Zhejiang Provincial Natural Science Foundation of China(No.LR22F040003);the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(No.2022SZFR003);the Fundamental Research Funds for the Central Universities(226-2022-00200).
Solution-processed organic‒inorganic halide perovskite(OIHP)single crystals(SCs)have demonstrated great potential in ionizing radiation detection due to their outstanding charge transport properties and low-cost prepa...
关键词：resolution CONFINED STRESS 
Origins of Ultrafast Pulse Laser-Induced Nano Straight Lines with Potential Applications in Detecting Subsurface Defects in Silicon Carbide Wafers被引量：1
《Nanomanufacturing and Metrology》2022年第2期167-178,共12页Tan Shu Feng Liu Shuai Chen Xingtao Liu Chen Zhang Gary J.Cheng 
financially supported by the National Key Research and Development Program of China(grant No.2018YFB1107701)。
The inspection of silicon carbide(SiC)wafer quality has attracted considerable attention because internal microstructure defects are challenging to detect in production lines.Expensive and destructive methods are usua...
关键词：Ultrafast laser processing Surface nanostructure SiC wafer DISLOCATION Molecular dynamics 
Layer-by-layer epitaxy of multi-layer MoS_(2) wafers被引量：5
《National Science Review》2022年第6期148-157,共10页Qinqin Wang Jian Tang Xiaomei Li Jinpeng Tian Jing Liang Na Li Depeng Ji Lede Xian Yutuo Guo Lu Li Qinghua Zhang Yanbang Chu Zheng Wei Yanchong Zhao Luojun Du Hua Yu Xuedong Bai Lin Gu Kaihui Liu Wei Yang Rong Yang Dongxia Shi Guangyu Zhang 
supported by the National Key Research and Development Program of China(2021YFA1202900);the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(XDB30000000);the Key-Area Research and Development Program of Guangdong Province(2020B0101340001);the National Natural Science Foundation of China(11834017 and61888102);the Key Research Program of Frontier Sciences of CAS(QYZDB-SSW-SLH004)。
The 2D semiconductor of MoShas great potential for advanced electronics technologies beyond silicon.So far,high-quality monolayer MoSwafers have been available and various demonstrations from individual transistors to...
关键词：2D semiconductor multilayer MoS2 wafer layer-by-layer epitaxy high performance transistors thin film transistors 
Direct Conversion X-Ray Detectors with High Sensitivity at Low Dose Rate Based on All-Inorganic Lead-Free Perovskite Wafers
《Detection》2022年第2期13-27,共15页Cuixian Zhang 
Just as lead-based perovskites that are hot in solar cell preparation, Bi-based perovskites have demonstrated excellent performance in direct X-ray detection, especially the Cs3Bi2I9 s...
关键词：X-Ray Detection Sensitivity Cs3Bi2I9 
Oxide perovskite Ba_(2)AgIO_(6)wafers for X-ray detection
《Frontiers of Optoelectronics》2021年第4期473-481,共9页Longbo YANG Jincong PANG Zhifang TAN Qi XIAO Tong JIN Jiajun LUO Guangda NIU Jiang TANG 
the National Postdoctoral Program for Innovative Talent(No.BX20200142);the National Natural Science Foundation of China(Grant Nos.61725401,5171101030,and 51761145048);the National Key R&D Program of China(Nos.2016YFB0700702,2016YFA0204000,and 2016YFB0201204);the HUST Key Innovation Team for Interdisciplinary Promotion(No.2016JCTD111);China Postdoctoral Science Foundation(Nos.2020M62004075 and 2020M62005089).
X-ray detection is of great significance in biomedical,nondestructive,and scientific research.Lead halide perovskites have recently emerged as one of the most promising materials for direct X-ray detection.However,the...
关键词：oxide double perovskite LEAD-FREE X-ray detection 
A comparative study of rhenium coatings prepared on graphite wafers by chemical vapor deposition and electrodeposition in molten salts被引量：1
《Rare Metals》2021年第1期202-211,共10页Jiang-Fan Wang Shu-Xin Bai Yi-Cong Ye Li-An Zhu Hong Zhang 
financially supported by the National Natural Science Foundation of China(No.51501224)。
The purity,preferred orientation,microstructure,microhardness,bonding strength,thickness uniformity and thermal stability of rhenium(Re)coatings prepared on graphite wafers by chemical vapor deposition(CVD)and electro...
关键词：Rhenium coating Graphite wafer Chemical vapor deposition ELECTRODEPOSITION Molten salt Grain boundary mobility 
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