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作 者:HAO SU JIAWEN QIU JUNLONG LI RONG CHEN JIANBI LE XIAOYANG LEI YONGAI ZHANG XIONGTU ZHOU TAILIANG GUO CHAOXING WU
机构地区:[1]School of Physics and Information Engineering,Fuzhou University,Fuzhou 350000,China [2]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China [3]Fujian Inspection and Research Institute for Product Quality,Fuzhou 350002,China
出 处:《Photonics Research》2024年第8期1776-1784,共9页光子学研究(英文版)
基 金:National Key Research and Development Program of China(2021YFB3600400);Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China(2020ZZ113)。
摘 要:Non-destructive and accurate inspection of gallium nitride light-emitting diode(Ga N-LED)epitaxial wafers is important to Ga N-LED technology.However,the conventional electroluminescence inspection,the photoluminescence inspection,and the automated optical inspection cannot fulfill the complex technical requirements.In this work,an inspection method and an operation system based on soft single-contact operation,namely,single-contact electroluminescence(SC-EL)inspection,are proposed.The key component of the SC-EL inspection system is a soft conductive probe with an optical fiber inside,and an AC voltage(70Vpp,100 k Hz)is applied between the probe and the ITO electrode under the LED epitaxial wafer.The proposed SC-EL inspection can measure both the electrical and optical parameters of the LED epitaxial wafer at the same time,while not causing mechanical damage to the LED epitaxial wafer.Moreover,it is demonstrated that the SC-EL inspection has a higher electroluminescence wavelength accuracy than photoluminescence inspection.The results show that the non-uniformity of SC-EL inspection is 444.64%,which is much lower than that of photoluminescence inspection.In addition,the obtained electrical parameters from SC-EL can reflect the reverse leakage current(Is)level of the LED epitaxial wafer.The proposed SC-EL inspection can ensure high inspection accuracy without causing damage to the LED epitaxial wafer,which holds promising application in LED technology.
关 键 词:ELECTROLUMINESCENCE operation EPITAXIAL
分 类 号:TN312.8[电子电信—物理电子学]
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