supported by the National Key R&D Program of China under Grant No.2023YFB2806800;Fundamental and Applied Fundamental Research Fund of Guangdong Province(No.2021B1515130001);Shenzhen Science and Technology Program(No.JCYJ20220818100603007).
The issue of brightness in strong ambient light conditions is one of the critical obstacles restricting the application of augmented reality(AR)and mixed reality(MR).Gallium nitride(GaN)-based micro-LEDs,renowned for ...
financially supported by the National Key R&D Program of China(2022YFB3807700);the National Natural Science Foundation of China(Grant no.52125405 and U22A20108);the support from the Hubei Provincial Natural Science Foundation of China(Grant No.2023AFB155);the opening project of State Key Laboratory of Metastable Materials Science and Technology(Yanshan University)(opening project number:202401,202404);the Thailand Science Research and Innovation Fund Chulalongkorn University(INDF67620003);the National Science,Research and Innovation Fund(NSRF)via the Program Management Unit for Human Resources&Institutional Development,Research and Innovation(Grant no.B05F640153);the National Research Council of Thailand(NRCT)and Chulalongkorn University(N42A660383)。
Constructing a protective layer on Zn anode surface with high lattice matching to Zn(002)can facilitate preferential growth along the(002)crystal plane and suppress dendritic growth as well as interface side reactions...
supported by the National Key Research and Development Program of China(Grant Nos.2023YFA1406404 and 2020YFA0309100);the National Natural Science Foundation of China(Grant Nos.12074365,12374094,12304153,U2032218,and 11974326),the National Natural Science Foundation of China(Grant No.12274120);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-084);the Fundamental Research Funds for the Central Universities(Grant Nos.WK9990000102 and WK2030000035);Anhui Provincial Natural Science Foundation(Grant No.2308085MA15);Hefei Science Center CAS Foundation(Grant Nos.2021HSC-CIP017 and 2016HSC-IU06);the China Postdoctoral Science Foundation(Grant No.2022M713060)。
Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and...
In recent years,there has been a significant increase in research focused on the growth of large-area single crystals.Rajan et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogeni...
supported financially by the Beijing Natural Science Foundation(Nos.2212046,2234093,and L211001);the National Natural Science Foundation of China(Nos.51871011 and 51572017);the Research Fund for Commercialization of Major Scientific and Technological Achievements of Hebei Province(No.22281006Z);the Beijing Government Funds for the Constructive Project of Central Universities.
Physical properties,such as electrochemical and electromagnetic properties,of two-dimensional MXenes can be improved by enhancing their stability.However,MXenes fabricated via acid etching contain defects,which affect...
supported by the National Key R&D Program of China(2022YFB3605402);the National Natural Science Foundation of China(62274132,62004151,62274126);the Key Area R&D Program of Guangdong Province(2019B010127001,2020B010170001,2020B0909030003);the Natural Science Basic Research Program of Shaanxi under Program 2021JC-24,the Key Research and Development Program of Shaanxi(2021-GY-007);the Innovation Capability Support Program of Shaanxi(2021TD-04);the Key Research and Development Program of Shaanxi(2020ZDLGY03–07).
Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of ...
National Key Research and Development Program of China(2021YFB3600400);Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China(2020ZZ113)。
Non-destructive and accurate inspection of gallium nitride light-emitting diode(Ga N-LED)epitaxial wafers is important to Ga N-LED technology.However,the conventional electroluminescence inspection,the photoluminescen...
National Natural Science Foundation of China,Grant/Award Number:31770608;Postgraduate Research&Practice Innovation Program of Jiangsu Province,Grant/Award Number:KYCX22_1081;Jiangsu Specially‐appointed Professorship Program,Grant/Award Number:Sujiaoshi[2016]20。
The emergence of Li–Mg hybrid batteries has been receiving attention,owing to their enhanced electrochemical kinetics and reduced overpotential.Nevertheless,the persistent challenge of uneven Mg electrodeposition rem...
supported by the National Natural Science Foundation of China(No.52373249);the Science and Technology Project of Yibin Sanjiang New Area(No.2023SJXQSXZJ003);the Fundamental Research Funds for the Central Universities(No.20822041F4045)
Interface modification of zinc(Zn)metal anode with conductive three-dimensional(3D)structure is widely utilized in zinc ion batteries.However,the uniformity of zinc nucleation on surface microstructure is rarely inves...
supported by the National Key Research Program of China(Grant No.2022YFB3807604);the National Natural Science Foundation of China(Grant Nos.52027817,52072400,52025025,and 52150092).
The oxygen octahedral rotation(OOR)forms fundamental atomic distortions and symmetries in perovskite oxides and definitely determines their properties and functionalities.Therefore,epitaxial strain and interfacial str...