Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors  

作　　者：Youla Yang Daixuan Wu He Tian Tian-Ling Ren 

机构地区：[1]School of Integrated Circuit,Tsinghua University,Beijing 100083,China [2]School of Instrument Science and Technology,Xi'an Jiaotong University,Xi'an 710049,China

出　　处：《Journal of Semiconductors》2024年第10期1-2,共2页半导体学报（英文版）

摘　　要：In recent years,there has been a significant increase in research focused on the growth of large-area single crystals.Rajan et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogenides through assisted nucleation.The quality of molecular beam epitaxy(MBE)-grown two-dimensional(2D)materials can be greatly enhanced by using sacrificial species deposited simultaneously from an electron beam evaporator during the growth process.This technique notably boosts the nucleation rate of the target epitaxial layer,resulting in large,homogeneous monolayers with improved quasiparticle lifetimes and fostering the development of epitaxial van der Waals heterostructures.Additionally,micrometer-sized silver films have been formed at the air-water interface by directly depositing electrospray-generated silver ions onto an aqueous dispersion of reduced graphene oxide under ambient conditions[2].

关 键 词：silver EPITAXIAL dimensional 

分 类 号：TN386[电子电信—物理电子学]