ICP刻蚀GaP表面形貌控制(英文)  

GaP Surface Profile Control Through ICP Etching

作　　者：蒋文静[1] 徐晨[1] 邓琛[1] 高伟[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院光电子技术实验室,北京100124

出　　处：《纳米技术与精密工程》2010年第3期281-283,共3页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(SQ2007AA03Z431230);北京市属高等学校人才强教计划资助项目(05002015200504)

摘　　要：不同角度的GaP表面形貌刻蚀主要依赖于刻蚀参数的调节以及光刻胶的形貌,但要得到能够重复的光刻胶形貌是很困难的.研究了如何通过调节感应耦合等离子(ICP)刻蚀仪器本身的参数,而不依赖于不定的光刻胶形貌来得到可重复的表面形貌.通过研究可知,射频功率与腔室压强是影响表面形貌的最重要的两个参数.射频功率越小刻蚀得到的角度越大,腔室压强越大刻蚀得到的角度也越大.通常BCl3等离子体被用来作为GaP的刻蚀气体,但为了维持所需的等离子浓度以及更大的操作压强,Ar被加入刻蚀气体中.Etching anisotropy of GaP relies on the etching parameters and the shape of the mask,yet it is very difficult to obtain the repeatable mask shape. In this paper a method to control the surface profile by changing the parameters of inductively coupled plasma （ ICP） machine itself rather than depending on the indefinite mask shape was studied. It is concluded that cathode RF-power and chamber pressure are the two main parameters in the surface profile control. The smaller the RF-power is,the bigger the etching angle obtained; the higher the chamber pressure is,the bigger the etching angle achieved. BCl3 plasma chemistry is generally used to etch GaP compound semiconductors in a planar ICP reactor,into which the Ar plasma chemistry was added in this study to allow the plasma to maintain high ion density conditions over a broader range of operating pressure.

关 键 词：感应耦合等离子刻蚀 刻蚀形貌 等离子体 

分 类 号：TN305.2[电子电信—物理电子学]