闪锌矿GaN/Ga_xIn_(1-x)N应变异质结中电子-光学声子散射率  

Electron-Phonon Scattering Rate in a Zinc-Blende Ga_xIn_(1-x)N Strained Heterojunction

作　　者：李永治[1] 班士良[2] 

机构地区：[1]内蒙古科技大学应用物理系,内蒙古包头014010 [2]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2010年第3期284-288,共5页Journal of Inner Mongolia University：Natural Science Edition

基　　金：内蒙古自治区自然科学基金重点项目(20080404Zd02)

摘　　要：采用介电连续模型,计及晶格应变对材料物理参数的影响,利用费米黄金定则讨论闪锌矿GaN/GaxIn1-xN应变异质结中四支光学声子对电子的散射.计算结果表明,该异质结中对总散射率的贡献主要来自沟道材料的体纵光学声子;考虑电子吸收声子过程时,晶格应变对总散射率有较大影响.The dielectric continuum model and Fermi golden rule are adopted to investigate the electron-phonon scattering rates via the four branches of optical phonon modes in a strained zinc-blende GaxIn1-xN heterojunction by considering the effects of lattice strain on physical constants.The results of numerical computation show that the bulk longitudinal optical phonons in the channel side of the heterojunction play a main role to the total scattering rate,and the influence of lattice strain on the total scattering rate is obvious under consideration of the process of electron absorbing phonons.

关 键 词：氮化物 异质结 应变 散射率 光学声子 

分 类 号：O471.3[理学—半导体物理]