漏雪崩热载流子应力MOSFET的1/f噪声产生机理研究  

1/f NOISE CHARACTERISTIC OF DRAIN AVALANCHE HOT CARRIER STRESS IN MOSFET

作　　者：刘宇安[1] 

机构地区：[1]井冈山大学数理学院,江西吉安343009

出　　处：《井冈山大学学报（自然科学版）》2010年第3期27-30,44,共5页Journal of Jinggangshan University (Natural Science)

基　　金：江西省自然科学基金项目(2009GQW0010);江西省教育厅科技计划项目(GJJ10203);井冈山大学2008年科研课题项目(JZ0804)

摘　　要：研究了DAHC(漏雪崩热载流子)应力下MOSFEF的1/f噪声特性。从各种热载流子与缺陷相互作用的角度,进一步研究了DAHC应力MOSFEF的1/f噪声产生机理,合理解释其作为器件最大损伤应力。基于噪声机理明确了DAHC应力下MOSFEF的1/f噪声模型中各系数的物理意义,给出一个较明晰的各种热载流子与缺陷相互作用产生噪声的物理图像。进行了MOSFEF的DAHC应力实验,得到了其电参数和噪声参数。实验结果和本文模型符合良好。1/f noise characteristic of DAHC（drain avalanche hot carrier） stress in MOSFET is studied . From various hot-carriers interaction with the defects , the DAHC stress noise generation mechanism is also studied as the maximum device damage stress. Based on the new Noise mechanism, the noise model under the DAHC stress is proposed and the physical meaning of each factor is given. Furthermore, a physical image of generated by various hot carriers interaction with defects generate noise is given. The experimental evaluations on DAHC degradation and analysis show that the proposed model produces the correct results.

关 键 词：MOSFEF 漏雪崩热载流子 1/f噪声 

分 类 号：TN386[电子电信—物理电子学]