玻璃基LSCO/PZT/LSCO电容器的制备和铁电性能  

Preparation and ferroelectric properties of glass based LSCO/PZT/LSCO capacitor

作　　者：赵敬伟[1] 刘保亭[1] 郭颖楠[1] 边芳[1] 陈剑辉[1] 

机构地区：[1]河北大学物理科学与技术学院,铁性材料与器件研究所,河北保定071002

出　　处：《电子元件与材料》2010年第3期31-34,共4页Electronic Components And Materials

基　　金："973"计划前期研究专项资助项目(No2007CB616910);国家自然科学基金资助项目(No60876055);高等学校博士点基金资助项目(No20091301110002);河北省自然科学基金资助项目(NoE2008000620;NoE2009000207);河北省应用基础研究计划重点基础研究项目(No08965124D)

摘　　要：采用磁控溅射法制备La0.5Sr0.5CoO3(LSCO)薄膜、sol-gel法制备Pb(Zr0.4Ti0.6)O3(PZT)薄膜,在玻璃和Ti-Al/Si衬底上构架了LSCO/PZT/LSCO电容器,研究了衬底对LSCO/PZT/LSCO电容器结构和铁电性能的影响。研究发现:虽然生长在两种衬底上的PZT薄膜均为钙钛矿结构多晶薄膜,但是,生长在玻璃衬底上的LSCO/PZT/LSCO电容器具有更好的铁电性能。玻璃基LSCO/PZT/LSCO电容器的剩余极化强度(Pr)为28×10–6C/cm2,矫顽电压(Vc)为0.96V;而硅基LSCO/PZT/LSCO电容器的Pr为25×10–6C/cm2,Vc为1.05V。La0.5Sr0.5CoO3/Pb（Zr0.4Ti0.6）O3/La0.5Sr0.5CoO3（LSCO/PZT/LSCO） capacitors were fabricated on both glass and Ti-Al/Si substrates,in which LSCO film was deposited by magnetron sputtering,and PZT film was prepared by sol-gel method.Effects of the substrates on the structural and ferroelectric properties of the LSCO/PZT/LSCO capacitors were investigated.It is found that the LSCO/PZT/LSCO capacitor grown on glass substrate possesses better ferroelectric properties than that grown on Ti-Al/Si substrate,although both PZT films on two kinds of substrates are perovskite and polycrystalline.The remnant polarization（Pr） and coercive voltage（Vc） of the capacitor grown on glass substrate are 28×10–6C/cm2 and 0.96 V,respectively.Meanwhile,Pr and Vc of the capacitor grown on Ti-Al/Si substrate are 25×10–6C/cm2 and 1.05 V,respectively.

关 键 词：玻璃基LSCO/PZT/LSCO电容器 磁控溅射法 SOL-GEL法 铁电性能 

分 类 号：O484.42[理学—固体物理]