非晶ErAlO高k栅介质薄膜的制备及性能研究  

Fabrication and properties of amorphous ErAlO high-k gate dielectrics films

作　　者：陈伟[1,2] 方泽波[2] 谌家军[1] 

机构地区：[1]西华师范大学物理与电子信息学院,四川南充637002 [2]绍兴文理学院物理与电子信息系,浙江绍兴312000

出　　处：《电子元件与材料》2010年第1期28-31,共4页Electronic Components And Materials

基　　金：绍兴市重点科研资助项目(No.2007A21015);国家自然青年科学基金资助项目(No.60806031)

摘　　要：采用射频磁控溅射法在p型Si(100)衬底上成功制备了非晶Er2O3-Al2O3(ErAlO)栅介质复合氧化物薄膜。研究了ErAlO薄膜的结构及电学特性。XRD测量显示,ErAlO薄膜具有良好的热稳定性,样品经过900℃氧气氛退火30 min后仍保持非晶态结构。AFM照片显示,其表面粗糙度小于0.2 nm,平整度良好。ErAlO栅MOS结构在氧分压为1%时,薄膜的有效相对介电常数为9.5,外加偏压(Vg)为–1 V时样品的漏电流密度为7.5×10–3 A/cm2。非晶ErAlO薄膜是一种很有希望取代SiO2的新型高k栅介质候选材料。High-k dielectric Er2O3-Al2O3（ErAlO） complex oxide films were deposited on p-type Si（100） substrates by radio-frequency magnetron sputtering.Structure and electrical properties of the ErAlO films were studied.XRD analysis shows that the films are amorphous even after thermal annealing in O2 at 900 ℃ for 30 min.AFM analysis suggests that the films have an excellent surface appearance with RMS of less than 0.2 nm.The capacitance-voltage（C-V） curves of MOS capacitor present that the relative permittivity of the films is about 9.5 and leakage current density is 7.5×10–3 A/cm2 at –1 V.The amorphous ErAlO film is a promising candidate for high-k gate dielectric in Si microelectronic devices.

关 键 词：Er2O3-Al2O3 高K栅介质 射频磁控溅射 

分 类 号：TN304.55[电子电信—物理电子学]