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机构地区:[1]桂林电子科技大学机电工程学院,广西桂林541004
出 处:《电子元件与材料》2010年第2期66-69,共4页Electronic Components And Materials
基 金:国家自然科学基金资助项目(No.60666002)
摘 要:利用四点弯曲实验测试了一组芯片(30片)的强度,使用威布尔统计模型描述了芯片失效率的分布,预测了在后续热循环过程中芯片的失效概率。通过有限元软件研究了底充胶固化工艺对芯片上方垂直开裂应力、焊点等效塑性应变及低k层最大等效应力的影响。结果表明:与未经固化的相比,底充胶固化工艺使得芯片的失效率从0.08%增大到0.37%,焊点的等效塑性应变增大约7倍,低k层的最大等效应力增大约18%。The strength for a set of dies (the number of dies is 30) was tested by the four-point bending test. Weibull statistical model was used to describe the distribution of the die failure probability, and the die failure probability during subsequent thermal cycling was predicted. The effects of the curing process of the underfill on the vertical crack stress on top of the die, maximum equivalent stress of the low-k layer and equivalent plastic stain of the solder joint were investigated by finite element software. The results show that the die failure probability is increased from 0.08% to 0.37%, the equivalent plastic stain of the solder joint is increased by about 7 times than that without considering curing process, and the maximum equivalent stress of the low-k layer is increased by about 18% due to the curing process of the underfill.
分 类 号:TN406[电子电信—微电子学与固体电子学]
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