低压TiO_2系压敏陶瓷的伏安特性实验分析  

Voltage current characteristic of TiO_2 system varistor ceramics with low breakdown voltage

作　　者：朱道云[1] 周方桥[2] 丁志文[2] 

机构地区：[1]广东工业大学实验教学部,广东广州510006 [2]广州大学固体物理与材料研究实验室,广东广州510405

出　　处：《电子元件与材料》2010年第5期25-27,共3页Electronic Components And Materials

基　　金：广东工业大学博士启动基金资助项目(No083025);广州市教育局科技计划资助项目(No重点01-2)

摘　　要：采用耗尽层近似理论,分析了低压TiO2系压敏陶瓷在直流偏压下的伏安特性,并对ZnO、TiO2和SrTiO3系三种压敏陶瓷的伏安特性进行了测试、分析和比较。结果表明,在晶界势垒不太高(一般为零点几电子伏)及晶界电场强度不太大(约106V/m量级)的情况下,TiO2系压敏陶瓷晶界的电子传输机制不同于ZnO系压敏陶瓷,而与SrTiO3系压敏陶瓷的导电机制相似,属于肖特基热电子发射机制。The voltage current characteristic of TiO2 system varistor ceramics at DC bias voltage was analyzed by depletion layer approximation theory. By comparing and analyzing the similarities and differences of the measured VoI curves of ZnO, TiO2 and SrTiO3 system varistors, the mechanism of electron transmission through grain boundary of TiO2 system varistor ceramics was proposed. It shows that, at low energy barrier height and small grain boundary electric field strength, the electron transmission mechanism through TiO2 grain boundary is the thermionic emission in Schottky barrier, which is similar to that of SrTiO3 system varistor ceramics and is different from that of ZnO system varistor ceramics.

关 键 词：TiO2系压敏陶瓷 伏安特性 热电子发射 肖特基势垒 

分 类 号：TN304[电子电信—物理电子学] TN379