GD a-C:H膜对硅半导体器件的钝化作用  

PASSIVATION OF SILICAN SEMICONDUCTOR DEVICES BY GD a—C:H FILM

作　　者：马瑾[1] 宋学文[1] 

机构地区：[1]山东大学物理系

出　　处：《山东大学学报（自然科学版）》1990年第3期313-317,共5页Journal of Shandong University(Natural Science Edition)

摘　　要：将氢化非晶碳薄膜(GDα-C:H)应用于硅半导体晶体管的表面钝化,取得了与α-Si:H 膜相类似的效果。对α-C:H 的钝化机理进行了初步探讨。Hydrogenated amorphous Carbon film was applyed to passivation of surface of Silican semiconductor device and good effect that is close to cases passivated by a-Si:H film was achieved.Passivative mechanism of the a-C:H film was researched preliminarily.

关 键 词：a-C:H 半导体器件 表面钝化 

分 类 号：TN304.801[电子电信—物理电子学]