离子-C_(60)相互作用及其对C_(60)/Si异质结光电特性的影响  

ION C 60 INTERACTION AND ITS INFLUENCE ON THE PHOTOELECTRIC PROPERTIES OF C 60 /Si HETEROJUNCTIONS

作　　者：雷园园[1] 傅德君[1] 李金钗 郭怀喜 叶明生 范湘军 

机构地区：[1]武汉大学理学院加速器实验室

出　　处：《太阳能学报》1999年第1期49-54,共6页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金

摘　　要：用离化团簇束（ＩＣＢ）沉积法制备了Ｃ６０薄膜。ＸＲＤ测试表明，膜呈多晶结构；原位电阻测试表明，膜的室温电阻率超过１０３Ωｃｍ，具有负的电阻温度系数。用８０ｋｅＶｐ＋，ＢＢｒ３＋，Ａｒ＋和Ｈｅ＋对Ｃ６０膜作剂量范围为０—１０１６ｃｍ－２的离子注入，Ｃ６０膜的电阻率随注入剂量的增加而下降，ｐ＋注入使膜呈ｎ型电导，离子与Ｃ６０团簇的相互作用导致Ｃ６０分裂，并使膜表面非晶化。在沉积过程中溅射掺Ａｌ得到ｐ型Ｃ６０膜。Ｃ６０／Ｓｉ样品具有明显的异质结特性，光照对结特性有明显响应。C 60 films are prepared by means of ionized cluster beam(ICB) deposition,X ray diffraction(XRD) measurement showed that the C 60 films are of polycrystalline.The films show negative resistance temperature coefficients,and their room temperature resistivity is greater than 10 2 Ωcm.The films were implanted with 80keV phosphorus,BBr 3,Ar,and He ions,under doses ranging up to 10 16 cm -2 The resistivity of the implanted films decreases with increasing doses n type electrical conduction was observed for phosphorus implanted C 60 films.The interaction of impinging ions with C 60 clusters was found to force the C 60 molecules to disintegrate and the films to amorphize.p type conduction was observed for the C 60 films doped with aluminum by simultaneously sputtering aluminum during deposition.C 60 /Si structures show heterojunction characteristics and the characteristics is influenciable by light illumination.The photoelectrical properties of the films were found improved by doping of aluminum.

关 键 词：离化团簇束沉积 光电性质 碳60/硅 异质结 

分 类 号：O472.8[理学—半导体物理]