深亚微米抗辐射加固设计的SPICE仿真验证方法  

The Simulation Method Based on SPICE for Radiation-Hardening Design in Deep Submicron Technology

作　　者：王丹[1] 岳素格[1] 孙永姝[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《微电子学与计算机》2010年第6期80-84,共5页Microelectronics & Computer

摘　　要：由于在抗辐射加固设计(RHBD)中采用了环形栅的版图结构,由此引发了直栅SPICE仿真验证方法对RHBD不适用的问题.通过分析深亚微米工艺技术下环形栅结构的特性,建立了环形栅的有效栅宽长比算法,同时构建了环形栅的SPICE仿真模型,并针对抗辐射加固设计提出了如何有效地提取版图参数网表的策略,从而解决了传统SPICE仿真验证对RHBD不适用的问题,通过有效的仿真验证,确保电路性能,提高设计的可靠性.For using enclosed-gate layout MOSFETs in rad-hard by design,because the annular structure is different from ordinary rectangular gate essentially,so the conventional SPICE simulations is not-applicable to radiation-hardening design.In this paper,analyzing the characteristic of enclosed-gate in deep submicron technology,this thesis establishs s an effective aspect ratio arithmetic and buildes SPICE model for enclosed-gate,at the same time,a method about how to extract layout netlist availability is presented here,the three points mentioned above expound the simulation method of radiation-hardening design in deep submicron technology,which resolved the unapplicability between SPICE and RHBD traditionally.Throuth effective simulation,the circuit performance is ensured and reliability in the design is increased.

关 键 词：环形栅 SPICE仿真 抗辐射加固 模型 版图参数网表 

分 类 号：TN702[电子电信—电路与系统]