利用近场光谱研究GaN蓝光二极管的杂质发光  

Study on luminescence of GaN impurity by near field spectroscopy

作　　者：凌勇[1] 周赫田[1] 朱星[1] 黄贵松 党小忠 张国义[1] 

机构地区：[1]北京大学物理系人工微结构与介观物理实验室

出　　处：《电子显微学报》1999年第1期43-47,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金

摘　　要：运用近场光谱方法研究了在蓝宝石衬底上用低压ＭＯＣＶＤ方法外延生长的ＧａＮ蓝光二极管的杂质发光光谱。研究结果表明近场光谱为研究样品表面微观发光机理中提供了一个有力的手段，它能够给出样品表面微区空间分辨的局域光谱信息。本文给出了研究中所观察到的一些实验现象。By using near field spectroscopy we have studied the electro luminescence spectrum of GaN impurity epitaxied on sapphire substrate by low pressure MOCVD.The experimental results indicate that the near field spectroscopy is a powerul tool in the study of local luminescence on nanometer scale. We have studied the characteristic of the peak intensities in the near field spectrum vs.the inject current,meanwhile some experimental phenomenon are exhibited in this paper.

关 键 词：SNOM 氮化镓 蓝光 二极管 杂质发光 近场光谱 

分 类 号：TN364.2[电子电信—物理电子学]