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机构地区:[1]西安交通大学
出 处:《材料工程》1999年第2期6-8,11,共4页Journal of Materials Engineering
摘 要:用化学气相沉积法制备了红外晶体ZnS块材料;分别用XRD和TEM分析了所沉积ZnS的相结构,并用IR测试了其红外透过率。结果表明:在沉积温度为550~700℃,H2S/Zn摩尔流量比为0.5~20的条件下所沉积ZnS的相结构主要为闪锌矿结构;随着沉积温度的升高和H2S/Zn摩尔流量比的增大,ZnS中有纤锌矿结构出现且其含量增多,导致了ZnS红外透过率的降低。The infrared crystal ZnS bulk materials were prepared by chemical vapor deposition The phase structure of ZnS was respectively analyzed with XRD and TEM, and their infrared transmittance was measured using IR The results are as follows The phase structure of ZnS deposited at temperature range from 550℃ to 700℃ and H 2S/Zn mole flow ratio 0 5~20 is mainly sphalerite, and there exited a few wurtzite structure with layer morphology in ZnS The content of wurtzite structure tends to increase with increasing deposition temperature and H 2S/Zn mole flow ratio, which decreases infrared transmittance of ZnS The formation of wurtzite structure is related to partial pressure of sulphur in deposition atmosphere Therefore, ZnS bulk materials should be deposited at lower temperature and H 2S/Zn mole flow ratio to obtain unitary sphalerite structure
分 类 号:TN213.01[电子电信—物理电子学] TN304.22
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