中子辐照GaAs的X射线漫散射研究  

STUDY OF NEUTRON IRRADIATED Si-GaAs BY X RAY DIFFUSE SCATTERING

作　　者：刘键[1] 王佩璇[1] 

机构地区：[1]北京科技大学

出　　处：《材料研究学报》1999年第1期99-102,共4页Chinese Journal of Materials Research

摘　　要：用X射线漫散射研究了中子辐照GaAs中的缺陷．结果表明：中子辐照产生点缺陷团．辐照剂量为1019m－2和1021m－2时，缺陷团的平均半径分别为387nm和455nm．这可能是高剂量辐照下损伤区域交叠的结果．平均半径随退火温度的升高而减小是间隙原子与空位复合造成的．The defects of Si-GaAs induced by neutron irradiation has been studied by X ray diffuse scattering. It is concluded that neutron-irradiation produces the clusters of point defects in Si-GaAs. The mean radius of the microdefect is related to the neutron fluence, and the damaged region of higher neutron fluence is overlapping. The recombination of interstitial and vacancy in the process of annealing decreases the mean radius of cluster of point defects.

关 键 词：中子辐照 X射线漫散射 砷化镓 半导体 

分 类 号：TN304.23[电子电信—物理电子学]