全铌隧道结dc SQUID的制备和研究  

INVESTIGATION AND FABRICATION OF ALL NIOBIUM TUNNEL JUNCTION dc SQUID

作　　者：杜寰[1] 赵士平[1] 王瑞峰[1] 徐凤枝[1] 王晶[1] 陈赓华[1] 杨乾声[1] 

机构地区：[1]中科院物理研究所凝聚态物理中心

出　　处：《低温物理学报》1999年第1期1-4,共4页Low Temperature Physical Letters

摘　　要：本文用磁控溅射方法研究了全铌隧道结ｄｃＳＱＵＩＤ的制备．根据铌结的ＳｔｅｗａｒｔＭｃＣｕｍｂｅｒ参量βｃ选择确定结的并联电阻，消除了结的回滞，并联电阻后的ＩＶ曲线很好的符合ＲＳＪ模型．为了获得大的磁通电压调制幅度，设计了较小的ＳＱＵＩＤ环孔，环孔电感为Ｌ～２５ｐＨ．由此制备的ＳＱＵＩＤ具有传输函数（Ｖ／Φｅ）Ｉｂ～１．４ｍＶ／Φ０，其本征能量分辨率达～２４ｈ．Abstract We investigate the fabrication and properties of dc SQUIDs that are based upon all niobium SIS type Josephson tunnel junctions. The shunt resistance evaluated by considering the Stewart McCumber parameter β c is used to remove the hysteresis of the I V characteristics, and the resulting I V curves can be well described by the RSJ model. In order to obtain large flux voltage modulation depth, we use a small area SQUID ring, and the inductance of the ring is L ～25pH. The SQUIDs fabricated have their flux to voltage transfer coefficient ( V / Φ e) I b ～1.4mV/Φ 0, and intrinsic energy resolution ～1.6×10 -32 J/Hz.

关 键 词：超导器件 铌 隧道结 SQUID 

分 类 号：O511.1[理学—低温物理]