双势垒结构Cu-Al_2O_3-MgF_2-Au隧道结中的电子共振隧穿与发光特性研究  

RESEARCH OF ELECTRON RESONANT TUNNELING AND LIGHT EMISSION PROPERTIES OF DOUBLE BARRIER TUNNER JUNCTION 

作　　者：王茂祥[1] 孙承休[1] 史晓春 俞建华[1] 

机构地区：[1]东南大学电子工程系

出　　处：《物理学报》1999年第2期326-331,共6页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：制备了ＣｕＡｌ２Ｏ３ＭｇＦ２Ａｕ双势垒隧道发光结，分析了结加上一定偏压后的电子隧穿过程．指出由于构成隧道结的绝缘栅薄膜的厚度及禁带宽度的不同而导致双势垒中能级产生分裂，使电子通过栅区时产生共振隧穿现象．根据这一现象，并结合结的ＩＶ特性，对结的发光性能进行了讨论．这种结构的结与普通单势垒ＭＩＭ结相比，其发光效率（１０－６—１０－５）提高了近一个数量级，且发光光谱的波长范围及谱峰均向短波长方向移动。Abstract The Cu Al 2O 3 MgF 2 Au double barrier tunnel junction has been fabricated. In this structure the electron resonant tunneling occur when a bias voltage is applied because of the existence of a series of separated energy levels in the barrier.Together with the analysis of I V characteristics of the junction, the light emission properties have been discussed in detail.It shows that the light emission efficency,light emission stability etc,have been improved greatly.The light emission spectrum shifts towards short wavelength region as compared with that of the single barrier metal/insulator/metal junction.

关 键 词：MIM 隧道结 双势垒 电子共振隧穿 发光特性 

分 类 号：O484.41[理学—固体物理] O484.8[理学—物理]